Plasma half dicing based on micro-loading effect for ultra-thin LiNbO3 plate wave devices on Si substrate

Yoshimi Yunoki; Michio Kadota; Masaaki Moriyama; Shuji Tanaka

doi:10.1109/NEMS.2016.7758224

Plasma half dicing based on micro-loading effect for ultra-thin LiNbO₃ plate wave devices on Si substrate

Yoshimi Yunoki, Michio Kadota, Masaaki Moriyama, Shuji Tanaka

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ultra-wide band ladder filters with bandwidth of 41 to 51%, which fully cover the digital TV band, were fabricated using 0-th shear horizontal (SH₀) mode plate wave in a (0°, 117.5-120°, 0°) LiNbO₃ (LN) ultra-thin plate. A LN/cavity/Si wafer with a number of devices must be separated into chips as they can be mounted on a printed circuit board (PCB). When the wafer is separated using a dicing machine, the wafer must be protected from strong water showers because the LN ultra-thin plate of 0.5 to 0.6 μm thickness on a cavity is fragile. In this study, the authors developed a new separating (plasma half dicing) method using the micro-loading effect instead of the conventional blade dicing. This method enjoys the advantages of dry process, and no additional etching is needed, because the half dicing grooves are fabricated simultaneously with the device cavities. A chip filter mounted on a PCB after separation shows a good frequency characteristic similar to the one measured using a prober system before separation.

Original language	English
Title of host publication	2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	168-171
Number of pages	4
ISBN (Electronic)	9781509019472
DOIs	https://doi.org/10.1109/NEMS.2016.7758224
Publication status	Published - 2016 Nov 28
Event	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 - Sendai, Japan Duration: 2016 Apr 17 → 2016 Apr 20

Publication series

Name	2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016

Conference

Conference	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
Country/Territory	Japan
City	Sendai
Period	16/4/17 → 16/4/20

Keywords

SH mode plate wave
cavity type device
micro-loading effect
plasma dicing method
ultra-thin plate

Access to Document

10.1109/NEMS.2016.7758224

Cite this

Yunoki, Y., Kadota, M., Moriyama, M., & Tanaka, S. (2016). Plasma half dicing based on micro-loading effect for ultra-thin LiNbO₃ plate wave devices on Si substrate. In 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 (pp. 168-171). Article 7758224 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2016.7758224

Yunoki, Yoshimi ; Kadota, Michio ; Moriyama, Masaaki et al. / Plasma half dicing based on micro-loading effect for ultra-thin LiNbO₃ plate wave devices on Si substrate. 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 168-171 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016).

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title = "Plasma half dicing based on micro-loading effect for ultra-thin LiNbO3 plate wave devices on Si substrate",

abstract = "Ultra-wide band ladder filters with bandwidth of 41 to 51%, which fully cover the digital TV band, were fabricated using 0-th shear horizontal (SH0) mode plate wave in a (0°, 117.5-120°, 0°) LiNbO3 (LN) ultra-thin plate. A LN/cavity/Si wafer with a number of devices must be separated into chips as they can be mounted on a printed circuit board (PCB). When the wafer is separated using a dicing machine, the wafer must be protected from strong water showers because the LN ultra-thin plate of 0.5 to 0.6 μm thickness on a cavity is fragile. In this study, the authors developed a new separating (plasma half dicing) method using the micro-loading effect instead of the conventional blade dicing. This method enjoys the advantages of dry process, and no additional etching is needed, because the half dicing grooves are fabricated simultaneously with the device cavities. A chip filter mounted on a PCB after separation shows a good frequency characteristic similar to the one measured using a prober system before separation.",

keywords = "SH mode plate wave, cavity type device, micro-loading effect, plasma dicing method, ultra-thin plate",

author = "Yoshimi Yunoki and Michio Kadota and Masaaki Moriyama and Shuji Tanaka",

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Yunoki, Y, Kadota, M, Moriyama, M & Tanaka, S 2016, Plasma half dicing based on micro-loading effect for ultra-thin LiNbO₃ plate wave devices on Si substrate. in 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016., 7758224, 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Institute of Electrical and Electronics Engineers Inc., pp. 168-171, 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Sendai, Japan, 16/4/17. https://doi.org/10.1109/NEMS.2016.7758224

Plasma half dicing based on micro-loading effect for ultra-thin LiNbO₃ plate wave devices on Si substrate. / Yunoki, Yoshimi; Kadota, Michio; Moriyama, Masaaki et al.
2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 168-171 7758224 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Yunoki Y, Kadota M, Moriyama M , Tanaka S. Plasma half dicing based on micro-loading effect for ultra-thin LiNbO₃ plate wave devices on Si substrate. In 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 168-171. 7758224. (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016). doi: 10.1109/NEMS.2016.7758224