TY - GEN
T1 - Plasma nonlinearities and terahertz detection by field effect transistors
AU - Knap, W.
AU - Coquillat, D.
AU - Dyakonova, N.
AU - Klimenko, O.
AU - But, D.
AU - Teppe, F.
AU - Sakowicz, M.
AU - Lusakowski, J.
AU - Otsuji, T.
PY - 2012
Y1 - 2012
N2 - On overview of recent results concerning the plasma excitations in Field Effect Transistor is presented. We report on high magnetic field studies and we show evidences that the plasma waves are indeed propagating in the transistor channel. We show also how FET based THz detectors parameters can be determined using the static current voltage characteristics. The role of loading effects and temperature to enhance the THz responsivity is also demonstrated.
AB - On overview of recent results concerning the plasma excitations in Field Effect Transistor is presented. We report on high magnetic field studies and we show evidences that the plasma waves are indeed propagating in the transistor channel. We show also how FET based THz detectors parameters can be determined using the static current voltage characteristics. The role of loading effects and temperature to enhance the THz responsivity is also demonstrated.
KW - High electron mobility transistors
KW - plasma waves
KW - semiconductors
KW - terahertz wave detection
UR - http://www.scopus.com/inward/record.url?scp=84864648994&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864648994&partnerID=8YFLogxK
U2 - 10.1109/MIKON.2012.6233505
DO - 10.1109/MIKON.2012.6233505
M3 - Conference contribution
AN - SCOPUS:84864648994
SN - 9781457714351
T3 - 2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012
SP - 108
EP - 111
BT - 2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012
T2 - 2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012
Y2 - 21 May 2012 through 23 May 2012
ER -