The excitation of plasma oscillations in a channel of a high-electron-mobility transistor (HEMT) induced by optical illumination for terahertz (THz) generation requires a back contact to collect photogenerated holes. In particular, it could be a heavily doped p+-substrate. The effect of such a substrate on plasma oscillations in the channel is considered. Both possible reasons for oscillation damping, hole collisions and heavy hole-light hole transitions, are taken into account. We show that for properly designed structures, the influence of the p+-substrate on plasma oscillations can be negligible.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||4 B|
|Publication status||Published - 2004 Apr 15|
- High-electron-mobility transistor
- Plasma oscillations
ASJC Scopus subject areas
- Physics and Astronomy(all)