TY - JOUR
T1 - Platinum/porous GaN nanonetwork metal-semiconductor Schottky diode for room temperature hydrogen sensor
AU - Zhong, Aihua
AU - Sasaki, Takashi
AU - Hane, Kazuhiro
N1 - Funding Information:
The authors are grateful to thank Y. Kanamori, T. Wu, and B. Thubthimthong for scientific discussion. This work was supported by a research project, Grant-in-Aid for Scientific Research ( A 24246019 ). One of the authors (A.Z.) appreciates the China Scholarship Council (CSC) for financial support.
PY - 2014/3/1
Y1 - 2014/3/1
N2 - An in-plane electrically conductive honeycomb GaN nanonetwork grown by molecular beam epitaxy was used to fabricate a platinum (Pt)/porous GaN nanonetwork Schottky diode type hydrogen sensor. The Pt Schottky contact is a nanonetwork with typical width of 40 nm. Both the scanning electron microscopy image and current-voltage curve indicates that the Pt/porous GaN nanonetwork Schottky diode with barrier height of 0.497 eV and ideality factor of 38.5 is comprised of parallel nano-Schotttky diodes. The operating temperature of this Schottky diode hydrogen sensor on the porous GaN nanonetwork is successfully decreased to room temperature and it performs well in detecting hydrogen gas with various concentrations from 320 to 10,000 ppm.
AB - An in-plane electrically conductive honeycomb GaN nanonetwork grown by molecular beam epitaxy was used to fabricate a platinum (Pt)/porous GaN nanonetwork Schottky diode type hydrogen sensor. The Pt Schottky contact is a nanonetwork with typical width of 40 nm. Both the scanning electron microscopy image and current-voltage curve indicates that the Pt/porous GaN nanonetwork Schottky diode with barrier height of 0.497 eV and ideality factor of 38.5 is comprised of parallel nano-Schotttky diodes. The operating temperature of this Schottky diode hydrogen sensor on the porous GaN nanonetwork is successfully decreased to room temperature and it performs well in detecting hydrogen gas with various concentrations from 320 to 10,000 ppm.
KW - H sensor
KW - Honeycomb GaN nanonetwork
KW - Nano-Schottky diode
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U2 - 10.1016/j.sna.2014.01.014
DO - 10.1016/j.sna.2014.01.014
M3 - Article
AN - SCOPUS:84893289284
SN - 0924-4247
VL - 209
SP - 52
EP - 56
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
ER -