Platinum/porous GaN nanonetwork metal-semiconductor Schottky diode for room temperature hydrogen sensor

Aihua Zhong, Takashi Sasaki, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


An in-plane electrically conductive honeycomb GaN nanonetwork grown by molecular beam epitaxy was used to fabricate a platinum (Pt)/porous GaN nanonetwork Schottky diode type hydrogen sensor. The Pt Schottky contact is a nanonetwork with typical width of 40 nm. Both the scanning electron microscopy image and current-voltage curve indicates that the Pt/porous GaN nanonetwork Schottky diode with barrier height of 0.497 eV and ideality factor of 38.5 is comprised of parallel nano-Schotttky diodes. The operating temperature of this Schottky diode hydrogen sensor on the porous GaN nanonetwork is successfully decreased to room temperature and it performs well in detecting hydrogen gas with various concentrations from 320 to 10,000 ppm.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalSensors and Actuators, A: Physical
Publication statusPublished - 2014 Mar 1


  • H sensor
  • Honeycomb GaN nanonetwork
  • Nano-Schottky diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


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