Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation

A. Ihara; Y. Ohno; S. Takeda; S. Nagao; D. Diffily; Y. Satoh; K. Shimoyama; N. Hosoi

doi:10.1016/S0921-4526(99)00636-5

Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation

A. Ihara, Y. Ohno, S. Takeda, S. Nagao, D. Diffily, Y. Satoh, K. Shimoyama, N. Hosoi

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have found that a large number of dislocation loops of interstitial type are introduced in the active region of (Al)GaInP strained triple quantum wells (STQW) lasers by the effect of laser operation. These loops were always generated in the lasers, the driving current of which increased gradually as operating time increased. We have shown that the dislocation cores act as nonradiative recombination centers and therefore the loops cause the gradual degradation. The migration of interstitial atoms enhanced by laser operation are essential for the degradation of the lasers.

Original language	English
Pages (from-to)	1050-1053
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00636-5
Publication status	Published - 1999 Dec 15
Externally published	Yes
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 1999 Jul 26 → 1999 Jul 30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation",

abstract = "We have found that a large number of dislocation loops of interstitial type are introduced in the active region of (Al)GaInP strained triple quantum wells (STQW) lasers by the effect of laser operation. These loops were always generated in the lasers, the driving current of which increased gradually as operating time increased. We have shown that the dislocation cores act as nonradiative recombination centers and therefore the loops cause the gradual degradation. The migration of interstitial atoms enhanced by laser operation are essential for the degradation of the lasers.",

author = "A. Ihara and Y. Ohno and S. Takeda and S. Nagao and D. Diffily and Y. Satoh and K. Shimoyama and N. Hosoi",

year = "1999",

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doi = "10.1016/S0921-4526(99)00636-5",

language = "English",

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pages = "1050--1053",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation

AU - Ihara, A.

AU - Ohno, Y.

AU - Takeda, S.

AU - Nagao, S.

AU - Diffily, D.

AU - Satoh, Y.

AU - Shimoyama, K.

AU - Hosoi, N.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - We have found that a large number of dislocation loops of interstitial type are introduced in the active region of (Al)GaInP strained triple quantum wells (STQW) lasers by the effect of laser operation. These loops were always generated in the lasers, the driving current of which increased gradually as operating time increased. We have shown that the dislocation cores act as nonradiative recombination centers and therefore the loops cause the gradual degradation. The migration of interstitial atoms enhanced by laser operation are essential for the degradation of the lasers.

AB - We have found that a large number of dislocation loops of interstitial type are introduced in the active region of (Al)GaInP strained triple quantum wells (STQW) lasers by the effect of laser operation. These loops were always generated in the lasers, the driving current of which increased gradually as operating time increased. We have shown that the dislocation cores act as nonradiative recombination centers and therefore the loops cause the gradual degradation. The migration of interstitial atoms enhanced by laser operation are essential for the degradation of the lasers.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033323471&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00636-5

DO - 10.1016/S0921-4526(99)00636-5

M3 - Conference article

AN - SCOPUS:0033323471

SN - 0921-4526

VL - 273-274

SP - 1050

EP - 1053

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation

Abstract

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