Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers

J. S. Park; S. K. Hong; T. Minegishi; S. H. Park; I. H. Im; T. Hanada; M. W. Cho; T. Yao; J. W. Lee; J. Y. Lee

doi:10.1063/1.2740190

Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers

J. S. Park, S. K. Hong, T. Minegishi, S. H. Park, I. H. Im, T. Hanada, M. W. Cho, T. Yao, J. W. Lee, J. Y. Lee

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2 O3. ZnO films grown on rocksalt structure CrN/(0001) Al2 O3 shows Zn polarity, while those grown on rhombohedral Cr2 O3 (0001) Al2 O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed.

Original language	English
Article number	201907
Journal	Applied Physics Letters
Volume	90
Issue number	20
DOIs	https://doi.org/10.1063/1.2740190
Publication status	Published - 2007

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title = "Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers",

abstract = "This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2 O3. ZnO films grown on rocksalt structure CrN/(0001) Al2 O3 shows Zn polarity, while those grown on rhombohedral Cr2 O3 (0001) Al2 O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed.",

author = "Park, {J. S.} and Hong, {S. K.} and T. Minegishi and Park, {S. H.} and Im, {I. H.} and T. Hanada and Cho, {M. W.} and T. Yao and Lee, {J. W.} and Lee, {J. Y.}",

note = "Funding Information: The CNU portion was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-205-D00078). ",

year = "2007",

doi = "10.1063/1.2740190",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers

AU - Park, J. S.

AU - Hong, S. K.

AU - Minegishi, T.

AU - Park, S. H.

AU - Im, I. H.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

AU - Lee, J. W.

AU - Lee, J. Y.

N1 - Funding Information: The CNU portion was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-205-D00078).

PY - 2007

Y1 - 2007

N2 - This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2 O3. ZnO films grown on rocksalt structure CrN/(0001) Al2 O3 shows Zn polarity, while those grown on rhombohedral Cr2 O3 (0001) Al2 O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed.

AB - This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2 O3. ZnO films grown on rocksalt structure CrN/(0001) Al2 O3 shows Zn polarity, while those grown on rhombohedral Cr2 O3 (0001) Al2 O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed.

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Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers

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