Abstract
Optical properties of anti-phase boundaries (APBs) in monolayer superlattices of GaP InP are studied. Determining selectively the arrangements of In and Ga atoms around APBs by cross-sectional scanning tunneling microscopy, it is found that atomic layers of InP on (1̄11) and (1̄10), sandwiched between the domains of superlattices, are formed on APBs. Polarized cathodoluminescence spectroscopy in a transmission electron microscope suggested that the InP layers act as quantum wells oriented on a slant with respect to the substrate and they emit light linearly polarized parallel to the layers.
Original language | English |
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Article number | 121307 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 72 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2005 Sept 15 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics