Polymer material as a gate dielectric for graphene field-effect-transistor applications

Myung Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm2 V-1s-1.

Original languageEnglish
Article number070107
JournalJapanese Journal of Applied Physics
Issue number7 PART 1
Publication statusPublished - 2011 Jul


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