TY - JOUR
T1 - Polymer material as a gate dielectric for graphene field-effect-transistor applications
AU - Jung, Myung Ho
AU - Handa, Hiroyuki
AU - Takahashi, Ryota
AU - Fukidome, Hirokazu
AU - Suemitsu, Tetsuya
AU - Otsuji, Taiichi
AU - Suemitsu, Maki
PY - 2011/7
Y1 - 2011/7
N2 - Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm2 V-1s-1.
AB - Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm2 V-1s-1.
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U2 - 10.1143/JJAP.50.070107
DO - 10.1143/JJAP.50.070107
M3 - Article
AN - SCOPUS:79960694242
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 7 PART 1
M1 - 070107
ER -