Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

R. Y. Gunji; M. Nakano; A. Tsukazaki; A. Ohtomo; T. Fukumura; M. Kawasaki

doi:10.1063/1.2956419

Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

R. Y. Gunji, M. Nakano, A. Tsukazaki, A. Ohtomo, T. Fukumura, M. Kawasaki

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We report on a Schottky junction fabricated on O-polar ZnO surfaces with a silane-coupling agent as a protective layer, and a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a deep work function metal electrode, simply by using wet processes. The silane-coupling agent prevented the O-polar ZnO surface from an etching reaction in contact with the acidic PEDOT:PSS solution, resulting in a good rectification with a current rectification ratio of 107 at ±1 V. The junction characteristics were systematically controlled in accord with the electron density in ZnO ranging from 8× 1014 to 4× 1016 cm-3.

Original language	English
Article number	012104
Journal	Applied Physics Letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.2956419
Publication status	Published - 2008

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10.1063/1.2956419

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@article{2b9b2fd2efd94639a961f44b414d7077,

title = "Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer",

abstract = "We report on a Schottky junction fabricated on O-polar ZnO surfaces with a silane-coupling agent as a protective layer, and a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a deep work function metal electrode, simply by using wet processes. The silane-coupling agent prevented the O-polar ZnO surface from an etching reaction in contact with the acidic PEDOT:PSS solution, resulting in a good rectification with a current rectification ratio of 107 at ±1 V. The junction characteristics were systematically controlled in accord with the electron density in ZnO ranging from 8× 1014 to 4× 1016 cm-3.",

author = "Gunji, {R. Y.} and M. Nakano and A. Tsukazaki and A. Ohtomo and T. Fukumura and M. Kawasaki",

note = "Funding Information: We thank to K. Nakahara and K. Ueno for fruitful discussion. This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology through a Grobal COE Program “Materials Integration International Center of Education Research” and Asahi Glass Foundation. M.N. is supported by Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists.",

year = "2008",

doi = "10.1063/1.2956419",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

AU - Gunji, R. Y.

AU - Nakano, M.

AU - Tsukazaki, A.

AU - Ohtomo, A.

AU - Fukumura, T.

AU - Kawasaki, M.

N1 - Funding Information: We thank to K. Nakahara and K. Ueno for fruitful discussion. This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology through a Grobal COE Program “Materials Integration International Center of Education Research” and Asahi Glass Foundation. M.N. is supported by Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists.

PY - 2008

Y1 - 2008

N2 - We report on a Schottky junction fabricated on O-polar ZnO surfaces with a silane-coupling agent as a protective layer, and a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a deep work function metal electrode, simply by using wet processes. The silane-coupling agent prevented the O-polar ZnO surface from an etching reaction in contact with the acidic PEDOT:PSS solution, resulting in a good rectification with a current rectification ratio of 107 at ±1 V. The junction characteristics were systematically controlled in accord with the electron density in ZnO ranging from 8× 1014 to 4× 1016 cm-3.

AB - We report on a Schottky junction fabricated on O-polar ZnO surfaces with a silane-coupling agent as a protective layer, and a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a deep work function metal electrode, simply by using wet processes. The silane-coupling agent prevented the O-polar ZnO surface from an etching reaction in contact with the acidic PEDOT:PSS solution, resulting in a good rectification with a current rectification ratio of 107 at ±1 V. The junction characteristics were systematically controlled in accord with the electron density in ZnO ranging from 8× 1014 to 4× 1016 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=47249097450&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249097450&partnerID=8YFLogxK

U2 - 10.1063/1.2956419

DO - 10.1063/1.2956419

M3 - Article

AN - SCOPUS:47249097450

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012104

ER -

Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

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