Population inversion and negative dynamic conductivity in optically pumped graphene

A. Satou; F. T. Vasko; T. Otsuji; V. Ryzhii

doi:10.1109/SISPAD.2009.5290199

Population inversion and negative dynamic conductivity in optically pumped graphene

A. Satou, F. T. Vasko, T. Otsuji, V. Ryzhii

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.

Original language	English
Title of host publication	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs	https://doi.org/10.1109/SISPAD.2009.5290199
Publication status	Published - 2009
Event	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States Duration: 2009 Sept 9 → 2009 Sept 11

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country/Territory	United States
City	San Diego, CA
Period	09/9/9 → 09/9/11

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10.1109/SISPAD.2009.5290199

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Satou, A., Vasko, F. T., Otsuji, T., & Ryzhii, V. (2009). Population inversion and negative dynamic conductivity in optically pumped graphene. In SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices Article 5290199 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2009.5290199

@inproceedings{3073f248e8774e028845ee15f8119c0b,

title = "Population inversion and negative dynamic conductivity in optically pumped graphene",

abstract = "We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.",

author = "A. Satou and Vasko, {F. T.} and T. Otsuji and V. Ryzhii",

year = "2009",

doi = "10.1109/SISPAD.2009.5290199",

language = "English",

isbn = "9781424439492",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

booktitle = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices",

note = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 09-09-2009 Through 11-09-2009",

}

Satou, A, Vasko, FT, Otsuji, T & Ryzhii, V 2009, Population inversion and negative dynamic conductivity in optically pumped graphene. in SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices., 5290199, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States, 09/9/9. https://doi.org/10.1109/SISPAD.2009.5290199

Population inversion and negative dynamic conductivity in optically pumped graphene. / Satou, A.; Vasko, F. T.; Otsuji, T. et al.
SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009. 5290199 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Population inversion and negative dynamic conductivity in optically pumped graphene

AU - Satou, A.

AU - Vasko, F. T.

AU - Otsuji, T.

AU - Ryzhii, V.

PY - 2009

Y1 - 2009

N2 - We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.

AB - We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.

UR - http://www.scopus.com/inward/record.url?scp=74349097612&partnerID=8YFLogxK

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U2 - 10.1109/SISPAD.2009.5290199

DO - 10.1109/SISPAD.2009.5290199

M3 - Conference contribution

AN - SCOPUS:74349097612

SN - 9781424439492

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 9 September 2009 through 11 September 2009

ER -

Population inversion and negative dynamic conductivity in optically pumped graphene

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