TY - JOUR
T1 - Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species
AU - Shima, Kohei
AU - Funato, Yuichi
AU - Sato, Noboru
AU - Fukushima, Yasuyuki
AU - Momose, Takeshi
AU - Shimogaki, Yukihiro
N1 - Funding Information:
The authors thank T. Hirabaru and Y. Otaka of the University of Tokyo for helping us taking FE-SEM images. The authors thank M. Shibuya of Ube Industries for supplying us with various SiC felts. The authors thank T. Tanaka and M. Kawasaki of Allte Cloth for providing us with SiO and AlO felts. This work was supported by METI, Japan. One of the authors (K.S.) was supported by the Japan Society for the Promotion of Science through the Program for Leading Graduate Schools (MERIT). 2 2 3
Publisher Copyright:
© 2020 American Chemical Society. All rights reserved.
PY - 2020/11/11
Y1 - 2020/11/11
N2 - We propose a new, concise method for conformal chemical vapor deposition (CVD) using sacrificial layers (SLs) to fill three-dimensional features with microscopic pores. SLs are porous membranes (e.g., ceramic felts) that filter film-forming species having high sticking-probability (η). CVD processes with multiple film-forming species generally suffer from poor conformality due to preferential film deposition at the inlets of features by the high-η species, such as reactive intermediates. An SL traps such high-η species before they reach the target features and selectively supplies film-forming species with lower η (e.g., source precursors or stable intermediates) that enables conformal film deposition. Here the trapping efficiency of an SL was predicted and a procedure for designing an optimal SL was established. The procedure was demonstrated by CVD of silicon carbide (SiC) with multiple film-forming species of high-η species (η = 8.0 × 10-3) and lower-η species (η = 5.9 × 10-5 and 2.2 × 10-7). The trapping of 99.2% of incident high-η species was achieved with an optimized SL, wherein the deposition rate (m/s) contribution by high-η species declined from 0.546 at the SL inlet to 0.014 at its outlet. Finally, using these optimized SLs, SiC-CVD filling of micron-scale trenches was demonstrated with an aspect-ratio of 16:1.
AB - We propose a new, concise method for conformal chemical vapor deposition (CVD) using sacrificial layers (SLs) to fill three-dimensional features with microscopic pores. SLs are porous membranes (e.g., ceramic felts) that filter film-forming species having high sticking-probability (η). CVD processes with multiple film-forming species generally suffer from poor conformality due to preferential film deposition at the inlets of features by the high-η species, such as reactive intermediates. An SL traps such high-η species before they reach the target features and selectively supplies film-forming species with lower η (e.g., source precursors or stable intermediates) that enables conformal film deposition. Here the trapping efficiency of an SL was predicted and a procedure for designing an optimal SL was established. The procedure was demonstrated by CVD of silicon carbide (SiC) with multiple film-forming species of high-η species (η = 8.0 × 10-3) and lower-η species (η = 5.9 × 10-5 and 2.2 × 10-7). The trapping of 99.2% of incident high-η species was achieved with an optimized SL, wherein the deposition rate (m/s) contribution by high-η species declined from 0.546 at the SL inlet to 0.014 at its outlet. Finally, using these optimized SLs, SiC-CVD filling of micron-scale trenches was demonstrated with an aspect-ratio of 16:1.
KW - chemical vapor deposition
KW - chemical vapor infiltration
KW - conformality
KW - porous membrane
KW - sacrificial layer
KW - silicon carbide
KW - sticking probability
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U2 - 10.1021/acsami.0c14069
DO - 10.1021/acsami.0c14069
M3 - Article
C2 - 33124421
AN - SCOPUS:85096079737
SN - 1944-8244
VL - 12
SP - 51016
EP - 51025
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 45
ER -