Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films

Daichi Oka, Yasushi Hirose, Hideyuki Kamisaka, Tomoteru Fukumura, Kimikazu Sasa, Satoshi Ishii, Hiroyuki Matsuzaki, Yukio Sato, Yuichi Ikuhara, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

99 Citations (Scopus)


Compressively strained SrTaO2N thin films were epitaxially grown on SrTiO3 substrates using nitrogen plasma-assisted pulsed laser deposition. Piezoresponse force microscopy measurements revealed small domains (101 - 102 nm) that exhibited classical ferroelectricity, a behaviour not previously observed in perovskite oxynitrides. The surrounding matrix region exhibited relaxor ferroelectric-like behaviour, with remanent polarisation invoked by domain poling. First-principles calculations suggested that the small domains and the surrounding matrix had trans-type and a cis-type anion arrangements, respectively. These experiments demonstrate the promise of tailoring the functionality of perovskite oxynitrides by modifying the anion arrangements by using epitaxial strain.

Original languageEnglish
Article number4987
JournalScientific Reports
Publication statusPublished - 2014 May 16


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