Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Haruo Nakazawa; Masaaki Ogino; Hideaki Teranishi; Yoshikazu Takahashi; Hitoshi Habuka

doi:10.1557/opl.2014.294

Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

Abstract

The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si₃N₄ crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N₂ (70%) + O₂ (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

Original language	English
Journal	Twentieth-Century Music
Volume	1591
Issue number	1
DOIs	https://doi.org/10.1557/opl.2014.294
Publication status	Published - 2014 Nov 6

Keywords

crystalline
defects
Si

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@article{3916df4f6c6f4efbaaa8fae748a55f61,

title = "Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere",

abstract = "The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.",

keywords = "crystalline, defects, Si",

author = "Haruo Nakazawa and Masaaki Ogino and Hideaki Teranishi and Yoshikazu Takahashi and Hitoshi Habuka",

note = "Publisher Copyright: Copyright {\textcopyright} Materials Research Society 2014.",

year = "2014",

month = nov,

day = "6",

doi = "10.1557/opl.2014.294",

language = "English",

volume = "1591",

journal = "Twentieth-Century Music",

issn = "1478-5722",

publisher = "Cambridge University Press",

number = "1",

}

TY - JOUR

T1 - Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

AU - Nakazawa, Haruo

AU - Ogino, Masaaki

AU - Teranishi, Hideaki

AU - Takahashi, Yoshikazu

AU - Habuka, Hitoshi

PY - 2014/11/6

Y1 - 2014/11/6

N2 - The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

AB - The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

KW - crystalline

KW - defects

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=84908608881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908608881&partnerID=8YFLogxK

U2 - 10.1557/opl.2014.294

DO - 10.1557/opl.2014.294

M3 - Article

AN - SCOPUS:84908608881

SN - 1478-5722

VL - 1591

JO - Twentieth-Century Music

JF - Twentieth-Century Music

IS - 1

ER -

Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

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Keywords

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