TY - JOUR
T1 - Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere
AU - Nakazawa, Haruo
AU - Ogino, Masaaki
AU - Teranishi, Hideaki
AU - Takahashi, Yoshikazu
AU - Habuka, Hitoshi
PY - 2014
Y1 - 2014
N2 - The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.
AB - The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.
KW - crystalline
KW - defects
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=84940256312&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940256312&partnerID=8YFLogxK
U2 - 10.1557/opl.2014.294
DO - 10.1557/opl.2014.294
M3 - Conference article
AN - SCOPUS:84940256312
SN - 0272-9172
VL - 1591
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - 2013 JSAP-MRS Joint Symposia
Y2 - 16 September 2013 through 20 September 2013
ER -