Precise control of epitaxy of graphene by microfabricating SiC substrate

H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th Seyller, M. Suemitsu

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.

Original languageEnglish
Article number041605
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2012 Jul 23


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