@article{f47ebba679684d59a4b9b918126ad945,
title = "Precise control of epitaxy of graphene by microfabricating SiC substrate",
abstract = "Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.",
author = "H. Fukidome and Y. Kawai and F. Fromm and M. Kotsugi and H. Handa and T. Ide and T. Ohkouchi and H. Miyashita and Y. Enta and T. Kinoshita and Th Seyller and M. Suemitsu",
note = "Funding Information: We gratefully acknowledge Professor K. Horn for critical reading for the manuscript and insightful discussions. Part of this work is supported by MEXT as Specially Supported Research (23000008) and Scientific Research (C) (23560003). Work in Erlangen was supported by the German Research Council (DFG) and by the European Science Foundation (ESF) through SE 1087/7-1 and SE 1087/9-1. Part of this work was performed at BL17SU of SPring-8 as Nanotechnology Support Project of MEXT (2009B1735, 2010A1674, and 2010B1712). Microfabrication of SiC(0001) substrates was done at Micro/Nano-Machining Research and Education Center, Tohoku University. ",
year = "2012",
month = jul,
day = "23",
doi = "10.1063/1.4740271",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "4",
}