Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

S. Toyoda; J. Okabayashi; H. Kumigashira; M. Oshima; G. L. Liu; Z. Liu; K. Ikeda; K. Usuda

doi:10.1063/1.2035894

Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, K. Usuda

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We have investigated chemical states and band offsets in SiNSi by photoemission spectroscopy and x-ray absorption spectroscopy. N 1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6-5.7 eV from valence-band, N 1s core level, and N K -edge-absorption spectra. Furthermore, time-dependent measurements of N 1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.

Original language	English
Article number	102901
Journal	Applied Physics Letters
Volume	87
Issue number	10
DOIs	https://doi.org/10.1063/1.2035894
Publication status	Published - 2005 Sept 5

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@article{3181b250a701424ea33ddbd374785728,

title = "Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy",

abstract = "We have investigated chemical states and band offsets in SiNSi by photoemission spectroscopy and x-ray absorption spectroscopy. N 1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6-5.7 eV from valence-band, N 1s core level, and N K -edge-absorption spectra. Furthermore, time-dependent measurements of N 1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.",

author = "S. Toyoda and J. Okabayashi and H. Kumigashira and M. Oshima and Liu, {G. L.} and Z. Liu and K. Ikeda and K. Usuda",

note = "Funding Information: This work was supported by Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission spectroscopy was performed under the Project 02S2-002 at the Institute of Materials Structure Science in KEK.",

year = "2005",

month = sep,

day = "5",

doi = "10.1063/1.2035894",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

AU - Toyoda, S.

AU - Okabayashi, J.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Liu, G. L.

AU - Liu, Z.

AU - Ikeda, K.

AU - Usuda, K.

N1 - Funding Information: This work was supported by Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission spectroscopy was performed under the Project 02S2-002 at the Institute of Materials Structure Science in KEK.

PY - 2005/9/5

Y1 - 2005/9/5

N2 - We have investigated chemical states and band offsets in SiNSi by photoemission spectroscopy and x-ray absorption spectroscopy. N 1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6-5.7 eV from valence-band, N 1s core level, and N K -edge-absorption spectra. Furthermore, time-dependent measurements of N 1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.

AB - We have investigated chemical states and band offsets in SiNSi by photoemission spectroscopy and x-ray absorption spectroscopy. N 1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6-5.7 eV from valence-band, N 1s core level, and N K -edge-absorption spectra. Furthermore, time-dependent measurements of N 1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.

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U2 - 10.1063/1.2035894

DO - 10.1063/1.2035894

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 102901

ER -

Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

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