TY - JOUR
T1 - Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells
AU - Sakai, Shigeta
AU - Kojima, Kazunobu
AU - Chichibu, Shigefusa F.
AU - Yamaguchi, Atsushi A.
N1 - Funding Information:
This work was partially supported by JSPS Grant-in-Aid for Scientific Research (JP17H05341, JP16H06427, JP17H04809, and JP17J11367).
Publisher Copyright:
© 2022 The Japan Society of Applied Physics.
PY - 2022/6
Y1 - 2022/6
N2 - Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensitive to the values of deformation potentials, all the reported data on the optical polarization properties have been theoretically analyzed based on the k p perturbation theory in this study, and we have made a precise determination of the deformation potentials' set. In addition, optical gain characteristics of InGaN QWs on GaN substrates with arbitrary substrate orientations have been theoretically calculated by using the determined deformation potentials' set. It is found that low-angle semipolar substrate orientation (θ1/4 45°) is very promising for low-cost and high-performance green LDs with cleaved-facet cavity mirrors.
AB - Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in semipolar and nonpolar InGaN QWs are very sensitive to the values of deformation potentials, all the reported data on the optical polarization properties have been theoretically analyzed based on the k p perturbation theory in this study, and we have made a precise determination of the deformation potentials' set. In addition, optical gain characteristics of InGaN QWs on GaN substrates with arbitrary substrate orientations have been theoretically calculated by using the determined deformation potentials' set. It is found that low-angle semipolar substrate orientation (θ1/4 45°) is very promising for low-cost and high-performance green LDs with cleaved-facet cavity mirrors.
KW - crystallographic orientation
KW - deformation potentials
KW - nitride semiconductors
KW - optical polarization properties
KW - valence band
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U2 - 10.35848/1347-4065/ac62e4
DO - 10.35848/1347-4065/ac62e4
M3 - Article
AN - SCOPUS:85131311001
SN - 0021-4922
VL - 61
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
M1 - 061003
ER -