Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control

Shujun Ye, Kikuo Yamabe, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Silicon (Si) nanopillar (NP)-based gate-all-around metal–oxide–semiconductor field-effect transistors (MOSFETs) are considered the primary components of next-generation integrated circuits according to the International Roadmap of Devices and Systems. In order to replace fin-structured MOSFETs with a several-nanometer technology node that is currently used, a precise fabrication method for uniform Si NPs with a sub-10-nm diameter and cylindrical shape is required. This study demonstrates that a double-oxidation process is capable of solving this problem for the first time. In particular, it includes the first oxidation at 900°C with deep self-limiting oxidation for shape control and variance decrease and second oxidation at 1000°C with a controllable oxidation rate for precise diameter control, with wet etching between two oxidations. Although Si oxidation is orientation dependent, the traverse cross-section of Si NPs is experimentally confirmed to keep a circle shape during oxidation and is theoretically attributed to the edge effect.

Original languageEnglish
Article number113818
JournalScripta Materialia
Publication statusPublished - 2021 Jun


  • Gate-all-around transistor
  • Oxidation control
  • Si nanopillar
  • Si nanowire
  • Sub-10-nm diameter


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