Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

Hisashi Takamizawa; Yasuo Shimizu; Koji Inoue; Yasuko Nozawa; Takeshi Toyama; Fumiko Yano; Masao Inoue; Akio Nishida; Yasuyoshi Nagai

doi:10.7567/APEX.9.106601

Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuko Nozawa, Takeshi Toyama, Fumiko Yano, Masao Inoue, Akio Nishida, Yasuyoshi Nagai

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Abstract

The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.

Original language	English
Article number	106601
Journal	Applied Physics Express
Volume	9
Issue number	10
DOIs	https://doi.org/10.7567/APEX.9.106601
Publication status	Published - 2016 Oct

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title = "Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography",

abstract = "The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.",

author = "Hisashi Takamizawa and Yasuo Shimizu and Koji Inoue and Yasuko Nozawa and Takeshi Toyama and Fumiko Yano and Masao Inoue and Akio Nishida and Yasuyoshi Nagai",

note = "Funding Information: This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO) and by Grants-in-Aid for JSPS Kakenhi Grant Numbers 26289097 and 15H05413 and a Grant-in-Aid for JSPS Research Fellows (No. 248082). Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = oct,

doi = "10.7567/APEX.9.106601",

language = "English",

volume = "9",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "10",

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TY - JOUR

T1 - Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

AU - Takamizawa, Hisashi

AU - Shimizu, Yasuo

AU - Inoue, Koji

AU - Nozawa, Yasuko

AU - Toyama, Takeshi

AU - Yano, Fumiko

AU - Inoue, Masao

AU - Nishida, Akio

AU - Nagai, Yasuyoshi

N1 - Funding Information: This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO) and by Grants-in-Aid for JSPS Kakenhi Grant Numbers 26289097 and 15H05413 and a Grant-in-Aid for JSPS Research Fellows (No. 248082). Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/10

Y1 - 2016/10

N2 - The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.

AB - The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.

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JO - Applied Physics Express

JF - Applied Physics Express

IS - 10

M1 - 106601

ER -

Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

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