Very thin gate oxide films with high insulating performance and high reliability are grown by controlling preoxide growth during the wafer heating up to thermal oxidation temperature using ultraclean oxidation method. The current level through the preoxide-controlled oxide is lower than that through the oxide including thicker preoxide, and the preoxide-controlled oxide has high reliability in term of hot electron injection.
|Number of pages||3|
|Publication status||Published - 1992 Dec 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas