Preparation and characterization of Bi-perovskite oxide films for piezo applications

Shintaro Yasui; Hiroshi Naganuma; Soichiro Okamura; Takashi Iijima; Ken Nishida; Takashi Katoda; Hiroshi Uchida; Seiichiro Koda; Hiroshi Funakubo

doi:10.1109/ISAF.2007.4393180

Preparation and characterization of Bi-perovskite oxide films for piezo applications

Shintaro Yasui, Hiroshi Naganuma, Soichiro Okamura, Takashi Iijima, Ken Nishida, Takashi Katoda, Hiroshi Uchida, Seiichiro Koda, Hiroshi Funakubo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin films of BiFeO₃-BiScO₃ (BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO₃-based films by replacing electrically-unstable Fe³⁺ for stable Sc ³⁺. The films with chemical composition of Bi(Fe_1-x, Sc_x)O₃ were fabricated on (111)Pt/TiO₂/SiO ₂ /(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe³⁺ and Sc³⁺ was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization - electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	102-103
Number of pages	2
DOIs	https://doi.org/10.1109/ISAF.2007.4393180
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 2007 May 27 → 2007 May 31

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Other

Other	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	07/5/27 → 07/5/31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2007.4393180

Cite this

Yasui, S., Naganuma, H., Okamura, S., Iijima, T., Nishida, K., Katoda, T., Uchida, H., Koda, S., & Funakubo, H. (2007). Preparation and characterization of Bi-perovskite oxide films for piezo applications. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 102-103). [4393180] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393180

Preparation and characterization of Bi-perovskite oxide films for piezo applications. / Yasui, Shintaro; Naganuma, Hiroshi; Okamura, Soichiro et al.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 102-103 4393180 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yasui, S, Naganuma, H, Okamura, S, Iijima, T, Nishida, K, Katoda, T, Uchida, H, Koda, S & Funakubo, H 2007, Preparation and characterization of Bi-perovskite oxide films for piezo applications. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393180, IEEE International Symposium on Applications of Ferroelectrics, pp. 102-103, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 07/5/27. https://doi.org/10.1109/ISAF.2007.4393180

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title = "Preparation and characterization of Bi-perovskite oxide films for piezo applications",

abstract = "Thin films of BiFeO3-BiScO3 (BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO3-based films by replacing electrically-unstable Fe3+ for stable Sc 3+. The films with chemical composition of Bi(Fe1-x, Scx)O3 were fabricated on (111)Pt/TiO2/SiO 2 /(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe3+ and Sc3+ was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization - electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.",

author = "Shintaro Yasui and Hiroshi Naganuma and Soichiro Okamura and Takashi Iijima and Ken Nishida and Takashi Katoda and Hiroshi Uchida and Seiichiro Koda and Hiroshi Funakubo",

year = "2007",

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doi = "10.1109/ISAF.2007.4393180",

language = "English",

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series = "IEEE International Symposium on Applications of Ferroelectrics",

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AU - Yasui, Shintaro

AU - Naganuma, Hiroshi

AU - Okamura, Soichiro

AU - Iijima, Takashi

AU - Nishida, Ken

AU - Katoda, Takashi

AU - Uchida, Hiroshi

AU - Koda, Seiichiro

AU - Funakubo, Hiroshi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Thin films of BiFeO3-BiScO3 (BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO3-based films by replacing electrically-unstable Fe3+ for stable Sc 3+. The films with chemical composition of Bi(Fe1-x, Scx)O3 were fabricated on (111)Pt/TiO2/SiO 2 /(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe3+ and Sc3+ was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization - electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.

AB - Thin films of BiFeO3-BiScO3 (BFO-BSO) solid-solution were fabricated for improving electrical resistivity of BiFeO3-based films by replacing electrically-unstable Fe3+ for stable Sc 3+. The films with chemical composition of Bi(Fe1-x, Scx)O3 were fabricated on (111)Pt/TiO2/SiO 2 /(100)Si by chemical solution deposition technique. Single phase of perovskite was obtained in the range of x = 0-0.3, where selective replacement of Fe3+ and Sc3+ was confirmed by Raman measurement. The leakage current density of BFO-BSO film was reduced by increasing x. Well-saturated polarization - electric field hysteresis loop was obtained for BFO-BSO film with x = 0.15.

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T3 - IEEE International Symposium on Applications of Ferroelectrics

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BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF

T2 - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF

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ER -

Preparation and characterization of Bi-perovskite oxide films for piezo applications

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