Preparation and Optical Properties of Bismuth Titanate Films by ECR Plasma Sputtering

Hiroshi Masumoto, Takashi Goto, Toshio Hirai, Yoichiro Masuda, Akira Baba

Research output: Contribution to journalArticlepeer-review


Bi-Ti-O oxide thin films were prepared on a sapphire single crystal substrate by electron cyclotron resonance (ECR) plasma sputtering. The target used was a sintered Bi4Ti3O12(BIT). The temperature of substrate (Tsub) was controlled in the range from room temperature to 640°C. The film obtained at Tsub=500°C was mixture of pyrochlore type oxide(Bi2Ti2O7) and Bi4Ti3O12 oxide. In the film formed at 640°C, the (001) plane of the Bi4Ti3O12 grew parallel to the (1120) and (1102) planes of the sapphire substrate, and the (104) plane of Bi4Ti3O12 grew parallel to the (0001) plane of the sapphire substrate. The deposition rate was about 200/min. Transmittance and refractive index of the Films were measured.

Original languageEnglish
Pages (from-to)109-112
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Issue number2
Publication statusPublished - 1992


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