Preparation and optical properties of epitaxial Pb(Mg1/3Nb 2/3)O3 - PbTiO3 thin film on Si substrates with buffer layer using pulsed laser deposition

Naru Nemoto; Naoki Wakiya; Kazuo Shinozaki; Takanori Kiguchi; Keisuke Satou; Masatoshi Ishii; Masao Kondo; Kazuaki Kurihara; Nobuyasu Mizutani

doi:10.4028/0-87849-982-2.265

Preparation and optical properties of epitaxial Pb(Mg_1/3Nb _2/3)O₃ - PbTiO₃ thin film on Si substrates with buffer layer using pulsed laser deposition

Naru Nemoto, Naoki Wakiya, Kazuo Shinozaki, Takanori Kiguchi, Keisuke Satou, Masatoshi Ishii, Masao Kondo, Kazuaki Kurihara, Nobuyasu Mizutani

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO ₃ (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO₃/SrTiO ₃/(La,Sr)CoO₃/CeO₂ /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.

Original language	English
Pages (from-to)	265-268
Number of pages	4
Journal	Key Engineering Materials
Volume	301
DOIs	https://doi.org/10.4028/0-87849-982-2.265
Publication status	Published - 2006 Jan 1
Externally published	Yes

Keywords

Buffer Layer
Epitaxial
Optical properties
PLD
PMN-PT
Thin Film

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-982-2.265

Cite this

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title = "Preparation and optical properties of epitaxial Pb(Mg1/3Nb 2/3)O3 - PbTiO3 thin film on Si substrates with buffer layer using pulsed laser deposition",

abstract = "Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO 3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO 3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.",

keywords = "Buffer Layer, Epitaxial, Optical properties, PLD, PMN-PT, Thin Film",

author = "Naru Nemoto and Naoki Wakiya and Kazuo Shinozaki and Takanori Kiguchi and Keisuke Satou and Masatoshi Ishii and Masao Kondo and Kazuaki Kurihara and Nobuyasu Mizutani",

year = "2006",

month = jan,

day = "1",

doi = "10.4028/0-87849-982-2.265",

language = "English",

volume = "301",

pages = "265--268",

journal = "Key Engineering Materials",

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T1 - Preparation and optical properties of epitaxial Pb(Mg1/3Nb 2/3)O3 - PbTiO3 thin film on Si substrates with buffer layer using pulsed laser deposition

AU - Nemoto, Naru

AU - Wakiya, Naoki

AU - Shinozaki, Kazuo

AU - Kiguchi, Takanori

AU - Satou, Keisuke

AU - Ishii, Masatoshi

AU - Kondo, Masao

AU - Kurihara, Kazuaki

AU - Mizutani, Nobuyasu

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO 3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO 3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.

AB - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO 3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO 3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.

KW - Buffer Layer

KW - Epitaxial

KW - Optical properties

KW - PLD

KW - PMN-PT

KW - Thin Film

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