Preparation and thermoelectric properties of mixed valence compound Sn2S3

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The preparation and thermoelectric properties of Sn2S3 polycrystalline samples were reported. An almost single-phase Sn2S3 polycrystalline sample was obtained by heating Sn and S mixed powders: the sample was successfully densified using a spark-plasma-sintering method. Sn2S3 building blocks with electron lone pairs were weakly bonded via van der Waals force. Similar to other compounds with electron lone pairs, a thermal conductivity lower than 1.4W&m%1&K%1 was obtained for the Sn2S3 sample from 298 to 701 K. Although the Sn2S3 sample exhibited a high absolute value of Seebeck coefficient, its electrical conductivity was considerably low, leading to a low dimensionless figure of merit, zT, of 9.6 ' 10%4 at 700 K. The poor electrical transport properties indicated that the Sn2S3 sample was a semiconductor with an extremely low carrier density, which was confirmed by measurements of its band gap and by calculations of the temperature dependence of Seebeck coefficient.

Original languageEnglish
Article number061201
JournalJapanese Journal of Applied Physics
Issue number6
Publication statusPublished - 2017 Jun


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