Preparation of BaRuO3 and BaIrO3 films by laser ablation

H. Masumoto, A. Ito, Y. Kaneko, T. Goto

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1 Citation (Scopus)


BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5×10-6 ωm and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4×10-2 to 4×10-4 ωm with decreasing TsUb from 1073 to 573 K.

Original languageEnglish
Pages (from-to)730-734
Number of pages5
JournalKey Engineering Materials
Volume336-338 I
Publication statusPublished - 2007


  • BaIrO
  • BaRuO
  • Laser ablation
  • Resistivity
  • Thin films


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