Abstract
Ba-Na-Nb-O thin films were formed on sapphire (1120) substrates by electron cyclotron resonance plasma sputtering by using ring shaped targets. A Ba2NaNb5O15 (BNN) thin film of single phase was obtained, at the substrate temperature of 873 K by using the target composition of Ba:Na:Nb = 1.0:1.0:5.0. The (001) oriented BNN film was successfully obtained at 923 K. The contents of Ba and Nb in the films were independent of substrate temperature in the range between 298 K and 923 K. However, Na content decreased with increasing substrate temperature. Deposition rates of the BNN thin films were estimated to be about 1.0X10-1 nm/s. The absorption edge of the BNN films deposited at 923 K became clear in the vacinity of 300 nm. The transmittance in the wavelength between 700 and 2000 nm have exceedingly by more than 80 %. The refractive index of the film was estimated about 2.07 at 627 nm.
Original language | English |
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Pages (from-to) | 86-89 |
Number of pages | 4 |
Journal | Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy |
Volume | 44 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1997 Jan |
Keywords
- BaNaNbO
- Electron cyclotron resonance plasma sputtering
- Refractive index
- Thin film
- Transmittance