Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition

Tetsuro Tohma; Hiroshi Masumoto; Takashi Goto

doi:10.1143/JJAP.41.6643

Preparation of BaTiO₃-BaZrO₃ films by metal-organic chemical vapor deposition

Tetsuro Tohma, Hiroshi Masumoto, Takashi Goto

Advanced Interdisciplinary Research Division

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Barium titanate zirconate (Ba(Ti_1-xZr_x)O₃) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x ≤ 0.15, the Ba(Ti_1-xZr_x)O ₃ films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti _1-xZr_x)O₃ films changed with x from 35 to 689 and showed a maximum at x = 0.15. The remanent polarization (2P_r,) and the coercive field (2E_C) of Ba(Ti_0.85Zr _0.15)O₃ film were 3μC·cm^-2 and 14kV·cm^-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti_1-xZ_x)O₃ film increased from 10k to 1 MV·cm^-1 with increasing x.

Original language	English
Pages (from-to)	6643-6646
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.6643
Publication status	Published - 2002 Nov

Keywords

Ba(TiZr)O
Barium titanate
Ferroelectric properties
Film
Metalorganic chemical vapor deposition

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.41.6643

Cite this

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title = "Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition",

abstract = "Barium titanate zirconate (Ba(Ti1-xZrx)O3) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x ≤ 0.15, the Ba(Ti1-xZrx)O 3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti 1-xZrx)O3 films changed with x from 35 to 689 and showed a maximum at x = 0.15. The remanent polarization (2Pr,) and the coercive field (2EC) of Ba(Ti0.85Zr 0.15)O3 film were 3μC·cm-2 and 14kV·cm-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZx)O3 film increased from 10k to 1 MV·cm-1 with increasing x.",

keywords = "Ba(TiZr)O, Barium titanate, Ferroelectric properties, Film, Metalorganic chemical vapor deposition",

author = "Tetsuro Tohma and Hiroshi Masumoto and Takashi Goto",

year = "2002",

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doi = "10.1143/JJAP.41.6643",

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T1 - Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition

AU - Tohma, Tetsuro

AU - Masumoto, Hiroshi

AU - Goto, Takashi

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Y1 - 2002/11

N2 - Barium titanate zirconate (Ba(Ti1-xZrx)O3) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x ≤ 0.15, the Ba(Ti1-xZrx)O 3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti 1-xZrx)O3 films changed with x from 35 to 689 and showed a maximum at x = 0.15. The remanent polarization (2Pr,) and the coercive field (2EC) of Ba(Ti0.85Zr 0.15)O3 film were 3μC·cm-2 and 14kV·cm-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZx)O3 film increased from 10k to 1 MV·cm-1 with increasing x.

AB - Barium titanate zirconate (Ba(Ti1-xZrx)O3) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x ≤ 0.15, the Ba(Ti1-xZrx)O 3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti 1-xZrx)O3 films changed with x from 35 to 689 and showed a maximum at x = 0.15. The remanent polarization (2Pr,) and the coercive field (2EC) of Ba(Ti0.85Zr 0.15)O3 film were 3μC·cm-2 and 14kV·cm-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZx)O3 film increased from 10k to 1 MV·cm-1 with increasing x.

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KW - Ferroelectric properties

KW - Film

KW - Metalorganic chemical vapor deposition

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