Preparation of Bi2Te3 films by electrodeposition

Yuzuru Miyazaki, Tsuyoshi Kajitani

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)


Bismuth telluride films have been electrochemically deposited from solutions of Bi2O3 and TeO2 in diluted HNO3 (pH = 0.50) onto Ti sheet working electrodes at 293 K. A conventional three-electrode cell was used with a platinum wire counter electrode and Ag/AgCl (saturated KCl) reference electrode. Single-phase films of Bi2+xTe3-x solid solution have been prepared from E = -200 to +80mV (versus Ag/AgCl). The films prepared at +20 ≤ E ≤ +60mV exhibit strong {1 1 0} orientation, while those prepared at +60 < E ≤ +80mV show remarkable {1 0 5} orientation. Both the a-axis and c-axis lengths are almost independent of the cathodic potential for E < -100mV. Above -100mV, the a-axis length gradually decreases and the c-axis length increases with cathodic potential, implying the Bi concentration in the Bi2+xTe3-x solid solution moves from the stoichiometric value. The films prepared at E < +20mV show p-type conduction, while those prepared at +20 ≤ E ≤ +80mV show n-type conduction. The largest Seebeck coefficient, S = -63 μVK-1 (300 K), has been observed for the film deposited at E = +20mV.

Original languageEnglish
Pages (from-to)542-546
Number of pages5
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2001 Jul 2


  • A2. Electrochemical growth
  • B1. Bismuth compounds
  • B2. Semiconducting materials


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