Preparation of c-Axis Oriented PbTi03 Films by MOCVD

Xiantong Chen, Hisanori Yamane, Kiyoshi Kaya, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Thin films of Pb—Ti—O were prepared on MgO(lOO) substrates by chemical vapor deposition using Pb(C2H5)4 and Ti(OC3H7)4 as sources. When the evaporation temperatures of Pb(C2H5)4 and Ti(OC3H7)4 were 50 and 15°C, respectively, the Pb/Ti molar ratio of the films had a maximum value about 1.2 at 500 °C. The Pb/Ti ratio of the deposits obtained at 600 °C decreased with increasing total gas pressure. The peaks from perovskite-type structure with the tetragonal symmetry were observed in the X-ray diffraction patterns of the films deposited at 2kPa and 400∼800 °C and at 2∼8 kPa and 600 °C, Most of the films shows αpha;-axis and c-axis orientation perpendicular to the film plane. The ratio of c-axis orientation “αpha;” was evaluated by using an equation: αpha; =I(001)/{I(001) +7(100)}, where 1(001) and 7(100) were the X -ray diffraction intensities of (001) and (100) reflection, respectively. The values of αpha; increased when the Pb/Ti molar ratio approached to 1. PbTiO3 thin films having a high c-axis orientation of αpha; =0.98 were successfully prepared with a deposition rate of 17 nm/min at 500°C.

Original languageEnglish
Pages (from-to)1367-1372
Number of pages6
JournalNippon Kagaku Kaishi
Issue number10
Publication statusPublished - 1991


Dive into the research topics of 'Preparation of c-Axis Oriented PbTi03 Films by MOCVD'. Together they form a unique fingerprint.

Cite this