Preparation of CuCl microcrystals-doped SiO2 glass by co-sputtering method

Seiichi Takami; Yasuyuki Egashira; Itaru Honma; Hiroshi Komiyama

Preparation of CuCl microcrystals-doped SiO₂ glass by co-sputtering method

Seiichi Takami, Yasuyuki Egashira, Itaru Honma, Hiroshi Komiyama

IMRAM - Center for Mineral Processing and Metallurgy (CMPM)

The University of Tokyo

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

CuCl microcrystals-doped SiO₂ glass is prepared by the co-sputtering method using extremely pure CuCl source materials as well as a pure SiO₂ target. Low temperature optical absorption spectra (2 K) show the shift of the Z_1,2 as well as the Z₃ exciton peaks, indicating that the mean radius of the microcrystals is about 5.8 nm.

Original language	English
Pages (from-to)	1020
Number of pages	1
Journal	Applied Physics Letters
Publication status	Published - 1995

Cite this

@article{5c0b91fda9284f6d92dcc1e9e7f81059,

title = "Preparation of CuCl microcrystals-doped SiO2 glass by co-sputtering method",

abstract = "CuCl microcrystals-doped SiO2 glass is prepared by the co-sputtering method using extremely pure CuCl source materials as well as a pure SiO2 target. Low temperature optical absorption spectra (2 K) show the shift of the Z1,2 as well as the Z3 exciton peaks, indicating that the mean radius of the microcrystals is about 5.8 nm.",

author = "Seiichi Takami and Yasuyuki Egashira and Itaru Honma and Hiroshi Komiyama",

year = "1995",

language = "English",

pages = "1020",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Preparation of CuCl microcrystals-doped SiO2 glass by co-sputtering method

AU - Takami, Seiichi

AU - Egashira, Yasuyuki

AU - Honma, Itaru

AU - Komiyama, Hiroshi

PY - 1995

Y1 - 1995

N2 - CuCl microcrystals-doped SiO2 glass is prepared by the co-sputtering method using extremely pure CuCl source materials as well as a pure SiO2 target. Low temperature optical absorption spectra (2 K) show the shift of the Z1,2 as well as the Z3 exciton peaks, indicating that the mean radius of the microcrystals is about 5.8 nm.

AB - CuCl microcrystals-doped SiO2 glass is prepared by the co-sputtering method using extremely pure CuCl source materials as well as a pure SiO2 target. Low temperature optical absorption spectra (2 K) show the shift of the Z1,2 as well as the Z3 exciton peaks, indicating that the mean radius of the microcrystals is about 5.8 nm.

UR - http://www.scopus.com/inward/record.url?scp=36448999163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36448999163&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36448999163

SN - 0003-6951

SP - 1020

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Preparation of CuCl microcrystals-doped SiO₂ glass by co-sputtering method

Abstract

Other files and links

Fingerprint

Cite this