Preparation of Epitaxial Bi4Ti3O12 Films on Sapphire Substrates by Chemical Vapor Deposition

Hiroshi Masumoto; Masahiko Namerikawa; Hisanori Yamane; Toshio Hirai

doi:10.2497/jjspm.40.693

Preparation of Epitaxial Bi₄Ti₃O₁₂ Films on Sapphire Substrates by Chemical Vapor Deposition

Hiroshi Masumoto, Masahiko Namerikawa, Hisanori Yamane, Toshio Hirai

Advanced Interdisciplinary Research Division

Research output: Contribution to journal › Article › peer-review

Abstract

Bismuth titanate (Bi₄Ti₃O₁₂) thin films were prepared above 700°C on sapphire (1120) substrates by chemical vapor deposition using tri-phenyl-bismuth[Bi(C₆H₅)₃] or tri-ortho-tolyl-bismuth [Bi(o-Tol)₃] as Bi sources and titanium-tetra-isopropoxide [Ti(i-C₃H₇O)₄] or di-isopropoxy-bis-(dipivaloyl metanato)-titanium [Ti(i-C₃H₇O)₂(DPM)₂] as Ti sources. The Bi₄Ti₃O₁₂ films showed preferred orientation of (001) parallel to (1120) of sapphire substrate. The epitaxial relationship between sapphire <0001> and Bi₄Ti₃O₁₂<100> was observed for the Bi₄Ti₃O₁₂ films prepared at 850°C.

Original language	English
Pages (from-to)	693-696
Number of pages	4
Journal	journal of the japan society of powder and powder metallurgy
Volume	40
Issue number	7
DOIs	https://doi.org/10.2497/jjspm.40.693
Publication status	Published - 1993

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

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@article{c7b42a423fda4e45bac3d70c3eb6d95b,

title = "Preparation of Epitaxial Bi4Ti3O12 Films on Sapphire Substrates by Chemical Vapor Deposition",

abstract = "Bismuth titanate (Bi4Ti3O12) thin films were prepared above 700°C on sapphire (1120) substrates by chemical vapor deposition using tri-phenyl-bismuth[Bi(C6H5)3] or tri-ortho-tolyl-bismuth [Bi(o-Tol)3] as Bi sources and titanium-tetra-isopropoxide [Ti(i-C3H7O)4] or di-isopropoxy-bis-(dipivaloyl metanato)-titanium [Ti(i-C3H7O)2(DPM)2] as Ti sources. The Bi4Ti3O12 films showed preferred orientation of (001) parallel to (1120) of sapphire substrate. The epitaxial relationship between sapphire <0001> and Bi4Ti3O12<100> was observed for the Bi4Ti3O12 films prepared at 850°C.",

author = "Hiroshi Masumoto and Masahiko Namerikawa and Hisanori Yamane and Toshio Hirai",

year = "1993",

doi = "10.2497/jjspm.40.693",

language = "English",

volume = "40",

pages = "693--696",

journal = "Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy",

issn = "0532-8799",

publisher = "Funtai Funamtsu Yakin Kyokai/Japan Soc. of Powder Metallurgy",

number = "7",

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T1 - Preparation of Epitaxial Bi4Ti3O12 Films on Sapphire Substrates by Chemical Vapor Deposition

AU - Masumoto, Hiroshi

AU - Namerikawa, Masahiko

AU - Yamane, Hisanori

AU - Hirai, Toshio

PY - 1993

Y1 - 1993

N2 - Bismuth titanate (Bi4Ti3O12) thin films were prepared above 700°C on sapphire (1120) substrates by chemical vapor deposition using tri-phenyl-bismuth[Bi(C6H5)3] or tri-ortho-tolyl-bismuth [Bi(o-Tol)3] as Bi sources and titanium-tetra-isopropoxide [Ti(i-C3H7O)4] or di-isopropoxy-bis-(dipivaloyl metanato)-titanium [Ti(i-C3H7O)2(DPM)2] as Ti sources. The Bi4Ti3O12 films showed preferred orientation of (001) parallel to (1120) of sapphire substrate. The epitaxial relationship between sapphire <0001> and Bi4Ti3O12<100> was observed for the Bi4Ti3O12 films prepared at 850°C.

AB - Bismuth titanate (Bi4Ti3O12) thin films were prepared above 700°C on sapphire (1120) substrates by chemical vapor deposition using tri-phenyl-bismuth[Bi(C6H5)3] or tri-ortho-tolyl-bismuth [Bi(o-Tol)3] as Bi sources and titanium-tetra-isopropoxide [Ti(i-C3H7O)4] or di-isopropoxy-bis-(dipivaloyl metanato)-titanium [Ti(i-C3H7O)2(DPM)2] as Ti sources. The Bi4Ti3O12 films showed preferred orientation of (001) parallel to (1120) of sapphire substrate. The epitaxial relationship between sapphire <0001> and Bi4Ti3O12<100> was observed for the Bi4Ti3O12 films prepared at 850°C.

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JO - Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

JF - Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

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Preparation of Epitaxial Bi₄Ti₃O₁₂ Films on Sapphire Substrates by Chemical Vapor Deposition

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