Preparation of flexible thin films from epitaxially grown anatase Nb: TiO2 using water-soluble Sr3Al2O6 sacrificial layer

Akihiro Hiraoka, Kohei Fujiwara, Hiroaki Nishikawa

Research output: Contribution to journalArticlepeer-review

Abstract

With the aim of developing new electronic functionalities for flexible devices, a transfer process for the preparation of flexible conductive thin films was examined using epitaxially grown anatase Nb: TiO2. Using pulsed laser deposition (PLD), water-soluble Sr3Al2O6 (SAO) was deposited on a single-crystalline LaAlO3 (100) substrate (LAO) as a sacrificial layer, followed by the epitaxial growth of anatase Nb: TiO2 on the sacrificial layer. The Nb: TiO2/SAO/LAO multilayer sample bonded onto a flexible polymer sheet via an adhesive tape was soaked into distilled water to transfer the epitaxially grown Nb: TiO2 thin film from SAO/LAO to the polymer sheet. The transferred anatase Nb: TiO2 thin film retained the clear X-ray diffraction peaks. Moreover, the areal transfer ratio was almost 100%, without the generation of significant impurity phases during the transfer process. On the basis of these results, the examined process was found promising for the preparation of flexible anatase Nb: TiO2 thin films. The voltage drop–current characteristics were measured successfully at room temperature for the transferred anatase Nb: TiO2 thin film using the standard four-probe method with gold electrodes.

Original languageEnglish
Article numbere12331
JournalElectronics and Communications in Japan
Volume104
Issue number4
DOIs
Publication statusPublished - 2021 Dec

Keywords

  • anatase Nb: TiO
  • epitaxial thin film
  • flexible
  • pulsed laser deposition

Fingerprint

Dive into the research topics of 'Preparation of flexible thin films from epitaxially grown anatase Nb: TiO2 using water-soluble Sr3Al2O6 sacrificial layer'. Together they form a unique fingerprint.

Cite this