Preparation of IrO2 thin films by oxidating laser-ablated Ir

Yuxue Liu, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.

Original languageEnglish
Pages (from-to)900-903
Number of pages4
JournalMaterials Transactions
Issue number3
Publication statusPublished - 2004 Mar


  • Glancing angle incidence X-ray diffraction
  • IrO thin films
  • Laser ablation
  • Optical transmittance
  • Resistivity
  • X-ray photoelectron spectra


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