Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10-7 Ωm. The optical transmittance of IrO2 thin films can reach to 60-80% in the wavelength range of 400-800 nm.
- Glancing angle incidence X-ray diffraction
- IrO thin films
- Laser ablation
- Optical transmittance
- X-ray photoelectron spectra