Preparation of lutetium nitride by direct nitridation

Takayuki Suehiro, Naoto Hirosaki, Yoshinobu Yamamoto, Toshiyuki Nishimura, Mamoru Mitomo, Junichi Takahashi, Hisanori Yamane

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Lutetium nitride (LuN), an end member of a new quaternary system Si3N4-SiO2-Lu2O3-LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu-Si-O-N system.

Original languageEnglish
Pages (from-to)959-963
Number of pages5
JournalJournal of Materials Research
Issue number3
Publication statusPublished - 2004 Mar


  • Ceramic
  • Firing
  • Structural

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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