Preparation of lutetium nitride by direct nitridation

Takayuki Suehiro; Naoto Hirosaki; Yoshinobu Yamamoto; Toshiyuki Nishimura; Mamoru Mitomo; Junichi Takahashi; Hisanori Yamane

doi:10.1557/jmr.2004.19.3.959

Preparation of lutetium nitride by direct nitridation

Takayuki Suehiro, Naoto Hirosaki, Yoshinobu Yamamoto, Toshiyuki Nishimura, Mamoru Mitomo, Junichi Takahashi, Hisanori Yamane

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Lutetium nitride (LuN), an end member of a new quaternary system Si3N4-SiO2-Lu2O3-LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu-Si-O-N system.

Original language	English
Pages (from-to)	959-963
Number of pages	5
Journal	Journal of Materials Research
Volume	19
Issue number	3
DOIs	https://doi.org/10.1557/jmr.2004.19.3.959
Publication status	Published - 2004 Mar

Keywords

Ceramic
Firing
Structural

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/jmr.2004.19.3.959

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title = "Preparation of lutetium nitride by direct nitridation",

abstract = "Lutetium nitride (LuN), an end member of a new quaternary system Si3N4-SiO2-Lu2O3-LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu-Si-O-N system.",

keywords = "Ceramic, Firing, Structural",

author = "Takayuki Suehiro and Naoto Hirosaki and Yoshinobu Yamamoto and Toshiyuki Nishimura and Mamoru Mitomo and Junichi Takahashi and Hisanori Yamane",

note = "Funding Information: This work was in part supported by a Grant-In-Aid for Scientific Research from the JSPS (No. 15360355).",

year = "2004",

month = mar,

doi = "10.1557/jmr.2004.19.3.959",

language = "English",

volume = "19",

pages = "959--963",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

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T1 - Preparation of lutetium nitride by direct nitridation

AU - Suehiro, Takayuki

AU - Hirosaki, Naoto

AU - Yamamoto, Yoshinobu

AU - Nishimura, Toshiyuki

AU - Mitomo, Mamoru

AU - Takahashi, Junichi

AU - Yamane, Hisanori

N1 - Funding Information: This work was in part supported by a Grant-In-Aid for Scientific Research from the JSPS (No. 15360355).

PY - 2004/3

Y1 - 2004/3

N2 - Lutetium nitride (LuN), an end member of a new quaternary system Si3N4-SiO2-Lu2O3-LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu-Si-O-N system.

AB - Lutetium nitride (LuN), an end member of a new quaternary system Si3N4-SiO2-Lu2O3-LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu-Si-O-N system.

KW - Ceramic

KW - Firing

KW - Structural

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DO - 10.1557/jmr.2004.19.3.959

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AN - SCOPUS:1942454854

SN - 0884-2914

VL - 19

SP - 959

EP - 963

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 3

ER -

Preparation of lutetium nitride by direct nitridation

Abstract

Keywords

ASJC Scopus subject areas

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