Preparation of MgIn2O4-X thin films on glass infstrate by RF sputtering

Hiroshi Un’ No, Naoko Hikuma, Takahisa Omata, Naoyuki Ueda, Takuya Hashimoto, Hiroshi Kawazoe

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H2 flow was 2.3ȕ102 S/cm, with a carrier concentration of 6.3ȕ1020 cm-3 and a mobility of 2.2 cm2 ƃV-1ƃs-1. No distinct optical absorption band was observed in the visible region.

Original languageEnglish
Pages (from-to)L1260-L1262
JournalJapanese Journal of Applied Physics
Issue number9
Publication statusPublished - 1993 Sept


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