Preparation of PbTiO₃ by CVD using PbO and titanium tetra-i-propoxide

PbTiO₃ was deposited on a (110) sapphire substrate by chemical vapor deposition using PbO and titanium tetra-i-propoxide (Ti[OCH(CH₃)₂]₄: TTIP). PbO and TTIP vapors generated at 1110°-1270°C and 64°-174°C respectively were transported to a substrate with carrier gases of Ar (350 ml/min) and O₂ (350 ml/min). One-phase PbTiO₃ was obtained at substrate temperatures (T_s) from 600° to 1150°C. Morphology of PbTiO₃ formed on the substrate was fine particle (T_s=600°-800°C), large particle (800°-1100°C) and platelet (1100°-1150°C). Good adhesion was observed between the deposit and the substrate above T_s=800°C. The platelets had crystalline preferred orientation. The crystallographic plane parallel to substrate changed from (111) to (100) and (001) with increasing TTIP evaporation temperature.