Preparation of thermally stable TiO2-terminated SrTiO 3(100) substrate surfaces

T. Ohnishi; K. Shibuya; M. Lippmaa; D. Kobayashi; H. Kumigashira; M. Oshima; H. Koinuma

doi:10.1063/1.1771461

Preparation of thermally stable TiO₂-terminated SrTiO ₃(100) substrate surfaces

T. Ohnishi, K. Shibuya, M. Lippmaa, D. Kobayashi, H. Kumigashira, M. Oshima, H. Koinuma

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48 Citations (Scopus)

Abstract

The thermal stability of TiO₂-terminated SrTiO₃(100) surfaces was investigated. The composition of the terminating atomic layer at temperatures up to 100°C, was measured using in situ coaxial impact-collision ion scattering spectroscopy. It was found that the TiO ₂ termination of a nonannealed but HF-etched surface started collapsing at temperatures as low as 300 °C, showing thermal instability of the chemically cleaved surface. An alternative way to prepare a stabilized SrTiO₃ surface, which maintains a perfect TiO₂ termination up to 700 °C, ideal for the growth of atomically sharp oxide heterointerfaces, was also presented.

Original language	English
Pages (from-to)	272-274
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	2
DOIs	https://doi.org/10.1063/1.1771461
Publication status	Published - 2004 Jul 12
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1771461

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abstract = "The thermal stability of TiO2-terminated SrTiO3(100) surfaces was investigated. The composition of the terminating atomic layer at temperatures up to 100°C, was measured using in situ coaxial impact-collision ion scattering spectroscopy. It was found that the TiO 2 termination of a nonannealed but HF-etched surface started collapsing at temperatures as low as 300 °C, showing thermal instability of the chemically cleaved surface. An alternative way to prepare a stabilized SrTiO3 surface, which maintains a perfect TiO2 termination up to 700 °C, ideal for the growth of atomically sharp oxide heterointerfaces, was also presented.",

author = "T. Ohnishi and K. Shibuya and M. Lippmaa and D. Kobayashi and H. Kumigashira and M. Oshima and H. Koinuma",

note = "Funding Information: The authors thank F. Sakai for ICP measurements. This work was partially supported by NEDO 2002 BR061, Mitsubishi Foundation, and Sumitomo Foundation. ",

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T1 - Preparation of thermally stable TiO2-terminated SrTiO 3(100) substrate surfaces

AU - Ohnishi, T.

AU - Shibuya, K.

AU - Lippmaa, M.

AU - Kobayashi, D.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Koinuma, H.

N1 - Funding Information: The authors thank F. Sakai for ICP measurements. This work was partially supported by NEDO 2002 BR061, Mitsubishi Foundation, and Sumitomo Foundation.

PY - 2004/7/12

Y1 - 2004/7/12

N2 - The thermal stability of TiO2-terminated SrTiO3(100) surfaces was investigated. The composition of the terminating atomic layer at temperatures up to 100°C, was measured using in situ coaxial impact-collision ion scattering spectroscopy. It was found that the TiO 2 termination of a nonannealed but HF-etched surface started collapsing at temperatures as low as 300 °C, showing thermal instability of the chemically cleaved surface. An alternative way to prepare a stabilized SrTiO3 surface, which maintains a perfect TiO2 termination up to 700 °C, ideal for the growth of atomically sharp oxide heterointerfaces, was also presented.

AB - The thermal stability of TiO2-terminated SrTiO3(100) surfaces was investigated. The composition of the terminating atomic layer at temperatures up to 100°C, was measured using in situ coaxial impact-collision ion scattering spectroscopy. It was found that the TiO 2 termination of a nonannealed but HF-etched surface started collapsing at temperatures as low as 300 °C, showing thermal instability of the chemically cleaved surface. An alternative way to prepare a stabilized SrTiO3 surface, which maintains a perfect TiO2 termination up to 700 °C, ideal for the growth of atomically sharp oxide heterointerfaces, was also presented.

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Preparation of thermally stable TiO₂-terminated SrTiO ₃(100) substrate surfaces

Abstract

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