Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering

Shingo Masaki, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa F. Chichibu

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.

Original languageEnglish
Pages (from-to)3135-3137
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics


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