Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering

Shingo Masaki; Hisayuki Nakanishi; Mutsumi Sugiyama; Shigefusa F. Chichibu

doi:10.1002/pssc.200779182

Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering

Shingo Masaki, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa F. Chichibu

Division of Measurements

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.

Original language	English
Pages (from-to)	3135-3137
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779182
Publication status	Published - 2008 Dec 1
Event	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering",

abstract = "Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.",

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T1 - Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering

AU - Masaki, Shingo

AU - Nakanishi, Hisayuki

AU - Sugiyama, Mutsumi

AU - Chichibu, Shigefusa F.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.

AB - Gallium doped zinc oxide (ZnO:Ga) transparent conducting oxide (TCO) films were prepared by the helicon-waveexcited plasma sputtering (HWPS) method. The films deposited at higher than 150 °C showed a preferential {0001}-oriented growth. A high optical transmittance greater than 80% was obtained in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the surface of the films. The results indicate that ZnO:Ga films deposited by the HWPS method can be used as a TCO film.

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EP - 3137

JO - Physica Status Solidi C: Conferences

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ER -

Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering

Abstract

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