Preparation of ZrO₂ thin films by CVD using H₂-CO₂ as oxidizer

Zirconium oxide films were prepared at 600° to 1000 °C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H₂ and CO₂ as a oxidation gas. The deposition rate of the films increased from 4 to 10 μm/h with increasing deposition temperature. The film obtained at 650 °C was amorphous. The films deposited at 850° and 1000 °C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO₂, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000 °C.