Abstract
This paper describes state-of-the-art of high-speed electronic device and IC technologies for very high-speed lightwave communications systems. The technology of interest is for over 40-Gbit/s transmitter and receiver operations. Device technology including Si-Ge, GaAs-based, and InP-based heterostructure transistors as well as circuit design technology including analog/digital/mixed-signal and optoelectronic IC's are reviewed. The speed limiting factors are discussed to address the future trends toward 100 Gbit/s and beyond.
| Original language | English |
|---|---|
| Pages (from-to) | 1-25 |
| Number of pages | 25 |
| Journal | International Journal of High Speed Electronics and Systems |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2003 Mar |
Keywords
- Compound semiconductor
- HBT
- HEMT
- IC
- Lightwave communication