Present and future of high-speed compound semiconductor IC's

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This paper describes state-of-the-art of high-speed electronic device and IC technologies for very high-speed lightwave communications systems. The technology of interest is for over 40-Gbit/s transmitter and receiver operations. Device technology including Si-Ge, GaAs-based, and InP-based heterostructure transistors as well as circuit design technology including analog/digital/mixed-signal and optoelectronic IC's are reviewed. The speed limiting factors are discussed to address the future trends toward 100 Gbit/s and beyond.

Original languageEnglish
Pages (from-to)1-25
Number of pages25
JournalInternational Journal of High Speed Electronics and Systems
Issue number1
Publication statusPublished - 2003 Mar


  • Compound semiconductor
  • HBT
  • HEMT
  • IC
  • Lightwave communication


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