Pressure-induced phase transition in NaV2O5 at low temperature

Kenji Ohwada, Hironori Nakao, Hirondo Nakatogawa, Naohisa Takesue, Yasuhiko Fujii, Masahiko Isobe, Yutaka Ueda, Yusuke Wakabayashi, Youichi Murakami

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11 Citations (Scopus)


Pressure effect on phase transition in NaV2O5 has been studied at low temperature by x-ray scattering. In addition to two well-known phases at ambient pressure such as P-phase (a × b × c orthorhombic unit cell at T > Tc0 = 35 K) and C1/4-phase (2a × 2b × 4c supercell at T < Tc0), we discovered a new high-pressure phase C0-phase, which has a 2a × 2b × 1c supercell and is considered to be a new ground state above 0.92 GPa at T < 20K. By measuring temperature dependence of superlattice intensity from the single crystal up to 1.24 GPa for the C1/4 - and C0-phases, we obtain the temperature-pressure phase diagram. The P-to-C1/4 phase transition is significantly suppressed as (dTc0/dP) ∼ -11(1) (K/GPa) at 0.1 MPa (1 atm.) while the C1/4-to-C0 phase transition takes place at Pc = 0.92 GPa nearly independent of temperature below 20K.

Original languageEnglish
Pages (from-to)639-642
Number of pages4
JournalJournal of the Physical Society of Japan
Issue number3
Publication statusPublished - 2000 Mar


  • Charge order
  • Low temperature and high pressure
  • NaVO
  • Spin-gap system


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