TY - JOUR
T1 - Pressure-induced valence change and moderate heavy fermion state in Eu-compounds
AU - Honda, Fuminori
AU - Okauchi, Keigo
AU - Sato, Yoshiki
AU - Nakamura, Ai
AU - Akamine, Hiromu
AU - Ashitomi, Yosuke
AU - Hedo, Masato
AU - Nakama, Takao
AU - Takeuchi, Tetsuya
AU - Valenta, Jaroslav
AU - Prchal, Jiri
AU - Sechovský, Vladimir
AU - Aoki, Dai
AU - Ōnuki, Yoshichika
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant Numbers JP15K05156, JP15KK0149, and JP16H01078 . The work (partly) was also supported by a Czech Science Foundation (project GAČR No. P204/15-03777S ).
Publisher Copyright:
© 2017
PY - 2018/5/1
Y1 - 2018/5/1
N2 - A pressure-induced valence transition has attracted much attention in Eu-compounds. Among them, EuRh2Si2, EuNi2Ge2, and EuCo2Ge2 reveal the valence transition around 1, 2, and 3 GPa, respectively. We have succeeded in growing single crystals of EuT2X2 (T: transition metal, X: Si, Ge) and studied electronic properties under pressure. EuRh2Si2 indicates a first-order valence transition between 1 and 2 GPa, with a large and prominent hysteresis in the electrical resistivity. At higher pressures, the first-order valence transition changes to a cross-over regime with an intermediate valence state. Tuning of the valence state with pressure is reflected in a drastic change of the temperature dependence of the electrical resistivity in EuRh2Si2 single crystals. Effect of pressure on the valence states on EuRh2Si2, EuIr2Si2, EuNi2Ge2, and EuCo2Ge2, as well as an isostructural related compound EuGa4, are reviewed.
AB - A pressure-induced valence transition has attracted much attention in Eu-compounds. Among them, EuRh2Si2, EuNi2Ge2, and EuCo2Ge2 reveal the valence transition around 1, 2, and 3 GPa, respectively. We have succeeded in growing single crystals of EuT2X2 (T: transition metal, X: Si, Ge) and studied electronic properties under pressure. EuRh2Si2 indicates a first-order valence transition between 1 and 2 GPa, with a large and prominent hysteresis in the electrical resistivity. At higher pressures, the first-order valence transition changes to a cross-over regime with an intermediate valence state. Tuning of the valence state with pressure is reflected in a drastic change of the temperature dependence of the electrical resistivity in EuRh2Si2 single crystals. Effect of pressure on the valence states on EuRh2Si2, EuIr2Si2, EuNi2Ge2, and EuCo2Ge2, as well as an isostructural related compound EuGa4, are reviewed.
KW - EuCoGe
KW - EuGa
KW - EuNiGe
KW - EuRhSi
KW - High pressure
KW - Single crystal
KW - Valence transition
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U2 - 10.1016/j.physb.2017.09.094
DO - 10.1016/j.physb.2017.09.094
M3 - Article
AN - SCOPUS:85032227251
SN - 0921-4526
VL - 536
SP - 182
EP - 191
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -