Process-variation-resilient OTA using MTJ-based multi-level resistance control

Masanori Natsui, Takaaki Nagashima, Takahiro Hanyu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)


A process, voltage, and temperature (PVT) variation conditioning technique using magnetic tunnel junction (MTJ) devices, whose resistance values are programmable, is proposed for realizing a wider design margin in analog integrated circuits. Because MTJ devices are fabricated on top of the CMOS integrated circuit layer, there is a small chip-area overhead for inserting additional MTJ devices into analog circuits, which makes it easy to use the variation-conditioning technique frequently on the entire chip. Additionally, the use of series-parallel connections for MTJ devices allows more flexible adjustment of the resistance. As a typical example, we demonstrate that under 0.18 mm CMOS technology, a simple operational Tran conductance amplifier (OTA) using the proposed technique outperforms a conventional OTA without any variation-conditioning technique.

Original languageEnglish
Title of host publicationProceedings - IEEE 42nd International Symposium on Multiple-Valued Logic, ISMVL 2012
Number of pages6
Publication statusPublished - 2012
Event42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012 - Victoria, BC, Canada
Duration: 2012 May 142012 May 16

Publication series

NameProceedings of The International Symposium on Multiple-Valued Logic
ISSN (Print)0195-623X


Conference42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012
CityVictoria, BC


  • Circuit conditioning
  • Magnetic tunnel junction device
  • Operational conductance amplifier
  • PVT variation


Dive into the research topics of 'Process-variation-resilient OTA using MTJ-based multi-level resistance control'. Together they form a unique fingerprint.

Cite this