Production of highly oxidized As on GaAs (110) at 20 K

Steven G. Anderson, J. M. Seo, T. Komeda, C. Capasso, J. H. Weaver

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


High-resolution synchrotron radiation photoemission results for O 2 physisorbed on GaAs (110) show Ga-O and As-O formation that is a direct result of photon-induced reaction at 20 K. Spatially resolved studies show that the thickness and chemical composition of the semiconductor oxides vary in proporition to total beam irradiation. The extent of reaction can be controlled by varying the amount of oxygen present on the surface, and As 5+-like bonding configurations can be formed. These results can only be understood when competition between thermodynamic, kinetic, photon- and electron-mediated processes are considered.

Original languageEnglish
Pages (from-to)2510-2512
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 1990


Dive into the research topics of 'Production of highly oxidized As on GaAs (110) at 20 K'. Together they form a unique fingerprint.

Cite this