Progress in MOVPE-growth of GaN to InN

Takashi Matsuoka

doi:10.1117/12.768644

Progress in MOVPE-growth of GaN to InN

Takashi Matsuoka

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity-controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

Original language	English
Title of host publication	Quantum Sensing and Nanophotonic Devices V
DOIs	https://doi.org/10.1117/12.768644
Publication status	Published - 2008
Event	Quantum Sensing and Nanophotonic Devices V - San Jose, CA, United States Duration: 2008 Jan 20 → 2008 Jan 23

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6900
ISSN (Print)	0277-786X

Conference

Conference	Quantum Sensing and Nanophotonic Devices V
Country/Territory	United States
City	San Jose, CA
Period	08/1/20 → 08/1/23

Keywords

GaN
Growth mechanism
InN
MOVPE
Nitride
Polarity

Access to Document

10.1117/12.768644

Cite this

@inproceedings{ccc2ba5280064482a78374acf9be0564,

title = "Progress in MOVPE-growth of GaN to InN",

abstract = "Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity-controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.",

keywords = "GaN, Growth mechanism, InN, MOVPE, Nitride, Polarity",

author = "Takashi Matsuoka",

year = "2008",

doi = "10.1117/12.768644",

language = "English",

isbn = "9780819470751",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Quantum Sensing and Nanophotonic Devices V",

note = "Quantum Sensing and Nanophotonic Devices V ; Conference date: 20-01-2008 Through 23-01-2008",

}

TY - GEN

T1 - Progress in MOVPE-growth of GaN to InN

AU - Matsuoka, Takashi

PY - 2008

Y1 - 2008

N2 - Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity-controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

AB - Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity-controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

KW - GaN

KW - Growth mechanism

KW - InN

KW - MOVPE

KW - Nitride

KW - Polarity

UR - http://www.scopus.com/inward/record.url?scp=43249120357&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43249120357&partnerID=8YFLogxK

U2 - 10.1117/12.768644

DO - 10.1117/12.768644

M3 - Conference contribution

AN - SCOPUS:43249120357

SN - 9780819470751

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Sensing and Nanophotonic Devices V

T2 - Quantum Sensing and Nanophotonic Devices V

Y2 - 20 January 2008 through 23 January 2008

ER -

Progress in MOVPE-growth of GaN to InN

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this