Progress in MOVPE-growth of GaN to InN

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity-controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices V
Publication statusPublished - 2008
EventQuantum Sensing and Nanophotonic Devices V - San Jose, CA, United States
Duration: 2008 Jan 202008 Jan 23

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceQuantum Sensing and Nanophotonic Devices V
Country/TerritoryUnited States
CitySan Jose, CA


  • GaN
  • Growth mechanism
  • InN
  • Nitride
  • Polarity


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