Progresses and future prospects in nitride semiconductors: Crystal growth and device applications

Takashi Matsuoka; Akio Yamamoto; Kazuyuki Tadatomo; Tetsuya Suemitsu; Yoshihiro Ishitani

doi:10.7567/JJAP.53.100200

Progresses and future prospects in nitride semiconductors: Crystal growth and device applications

Takashi Matsuoka, Akio Yamamoto, Kazuyuki Tadatomo, Tetsuya Suemitsu, Yoshihiro Ishitani

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Editorial

1 Citation (Scopus)

Original language	English
Article number	100200
Journal	Japanese Journal of Applied Physics
Volume	53
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.53.100200
Publication status	Published - 2014 Oct 1

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10.7567/JJAP.53.100200

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title = "Progresses and future prospects in nitride semiconductors: Crystal growth and device applications",

author = "Takashi Matsuoka and Akio Yamamoto and Kazuyuki Tadatomo and Tetsuya Suemitsu and Yoshihiro Ishitani",

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AU - Ishitani, Yoshihiro

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JO - Japanese Journal of Applied Physics

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Progresses and future prospects in nitride semiconductors: Crystal growth and device applications

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