TY - JOUR
T1 - Properties of Al doped zinc oxide films prepared by electron beam-PVD
AU - Yamaguchi, N.
AU - Kuroyama, T.
AU - Okuhara, Y.
AU - Matsubara, H.
PY - 2011
Y1 - 2011
N2 - Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.
AB - Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10-4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.
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U2 - 10.1088/1757-899X/18/9/092025
DO - 10.1088/1757-899X/18/9/092025
M3 - Conference article
AN - SCOPUS:84898781726
SN - 1757-8981
VL - 18
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - SYMPOSIUM 6
M1 - 092025
T2 - 3rd International Congress on Ceramics, ICC 2011
Y2 - 14 November 2010 through 18 November 2010
ER -