Properties of Cr in hydrogenated Si

Y. Sato; T. Takahashi; M. Suezawa

doi:10.1016/S0921-4526(01)00779-7

Properties of Cr in hydrogenated Si

Y. Sato, T. Takahashi, M. Suezawa

Research output: Contribution to journal › Article › peer-review

Abstract

Properties of interstitial chromium (Cr_i) in hydogenated p-type Si crystals were studied by means of an EPR method. Specimens were prepared from a floating-zone grown p-type Si crystal. They were doped with Cr by high temperature annealing in Cr vapor, followed by quenching. Then, they were doped with hydrogen (H) by annealing in H₂ gas followed by quenching. We measured their EPR spectra to determine the concentrations of Cr_i and CrB pair. The intensity of EPR spectrum due to Cr_i in hydrogenated Si was about one-tenth of that without H when they were doped at 1250°C. The heat of the solution of Cr in hydrogenated Si was determined to be about 1.9 eV which is much smaller than that (2.9 eV) without H doping. The migration energy of Cr_i in H-doped Si was determined to be 0.70±0.09 eV, which is smaller than that (about 1 eV) without H. Site change from interstitial to substitutional was observed in the specimen co-doped with Cr and Cu.

Original language	English
Pages (from-to)	434-437
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00779-7
Publication status	Published - 2001 Dec
Externally published	Yes

Keywords

Cr
EPR
Hydrogen
Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00779-7

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title = "Properties of Cr in hydrogenated Si",

abstract = "Properties of interstitial chromium (Cri) in hydogenated p-type Si crystals were studied by means of an EPR method. Specimens were prepared from a floating-zone grown p-type Si crystal. They were doped with Cr by high temperature annealing in Cr vapor, followed by quenching. Then, they were doped with hydrogen (H) by annealing in H2 gas followed by quenching. We measured their EPR spectra to determine the concentrations of Cri and CrB pair. The intensity of EPR spectrum due to Cri in hydrogenated Si was about one-tenth of that without H when they were doped at 1250°C. The heat of the solution of Cr in hydrogenated Si was determined to be about 1.9 eV which is much smaller than that (2.9 eV) without H doping. The migration energy of Cri in H-doped Si was determined to be 0.70±0.09 eV, which is smaller than that (about 1 eV) without H. Site change from interstitial to substitutional was observed in the specimen co-doped with Cr and Cu.",

keywords = "Cr, EPR, Hydrogen, Si",

author = "Y. Sato and T. Takahashi and M. Suezawa",

note = "Funding Information: This work was partly supported by the JSPS Research for the Future Program under the project “Ultimate Characterization Technique of SOI Wafers for Nano-scale LSI Devices” and a Grant-in-Aid for Scientific Research on Priority Area (B) “Manipulation of Atoms and Molecules by Electron Excitation” from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00779-7",

language = "English",

volume = "308-310",

pages = "434--437",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Properties of Cr in hydrogenated Si

AU - Sato, Y.

AU - Takahashi, T.

AU - Suezawa, M.

N1 - Funding Information: This work was partly supported by the JSPS Research for the Future Program under the project “Ultimate Characterization Technique of SOI Wafers for Nano-scale LSI Devices” and a Grant-in-Aid for Scientific Research on Priority Area (B) “Manipulation of Atoms and Molecules by Electron Excitation” from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2001/12

Y1 - 2001/12

N2 - Properties of interstitial chromium (Cri) in hydogenated p-type Si crystals were studied by means of an EPR method. Specimens were prepared from a floating-zone grown p-type Si crystal. They were doped with Cr by high temperature annealing in Cr vapor, followed by quenching. Then, they were doped with hydrogen (H) by annealing in H2 gas followed by quenching. We measured their EPR spectra to determine the concentrations of Cri and CrB pair. The intensity of EPR spectrum due to Cri in hydrogenated Si was about one-tenth of that without H when they were doped at 1250°C. The heat of the solution of Cr in hydrogenated Si was determined to be about 1.9 eV which is much smaller than that (2.9 eV) without H doping. The migration energy of Cri in H-doped Si was determined to be 0.70±0.09 eV, which is smaller than that (about 1 eV) without H. Site change from interstitial to substitutional was observed in the specimen co-doped with Cr and Cu.

AB - Properties of interstitial chromium (Cri) in hydogenated p-type Si crystals were studied by means of an EPR method. Specimens were prepared from a floating-zone grown p-type Si crystal. They were doped with Cr by high temperature annealing in Cr vapor, followed by quenching. Then, they were doped with hydrogen (H) by annealing in H2 gas followed by quenching. We measured their EPR spectra to determine the concentrations of Cri and CrB pair. The intensity of EPR spectrum due to Cri in hydrogenated Si was about one-tenth of that without H when they were doped at 1250°C. The heat of the solution of Cr in hydrogenated Si was determined to be about 1.9 eV which is much smaller than that (2.9 eV) without H doping. The migration energy of Cri in H-doped Si was determined to be 0.70±0.09 eV, which is smaller than that (about 1 eV) without H. Site change from interstitial to substitutional was observed in the specimen co-doped with Cr and Cu.

KW - Cr

KW - EPR

KW - Hydrogen

KW - Si

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SP - 434

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Properties of Cr in hydrogenated Si

Abstract

Keywords

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