Properties of Ga1-xMnxAs with high x (>0.1)

Daichi Chiba; K. M. Yu; W. Walukiewicz; Y. Nishitani; F. Matsukura; H. Ohno

doi:10.1063/1.2837469

Properties of Ga_1-xMn_xAs with high x (>0.1)

Daichi Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno

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Abstract

We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.

Original language	English
Article number	07D136
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2837469
Publication status	Published - 2008

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title = "Properties of Ga1-xMnxAs with high x (>0.1)",

abstract = "We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.",

author = "Daichi Chiba and Yu, {K. M.} and W. Walukiewicz and Y. Nishitani and F. Matsukura and H. Ohno",

note = "Funding Information: The authors thank M. Sawicki for useful discussions. The work at LBNL was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.",

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T1 - Properties of Ga1-xMnxAs with high x (>0.1)

AU - Chiba, Daichi

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Nishitani, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors thank M. Sawicki for useful discussions. The work at LBNL was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

PY - 2008

Y1 - 2008

N2 - We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.

AB - We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.

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Properties of Ga_1-xMn_xAs with high x (>0.1)

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