Properties of Ga1-xMnxAs with high x (>0.1)

Daichi Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, H. Ohno

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16 Citations (Scopus)


We have investigated the magnetic and the crystalline properties of a set of Ga1-x Mnx As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition xeff and the fraction of Mn atoms at various lattice sites. Here, xeff determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.

Original languageEnglish
Article number07D136
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2008


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