Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm

H. Sato; E. C.I. Enobio; M. Yamanouchi; S. Ikeda; S. Fukami; S. Kanai; F. Matsukura; H. Ohno

doi:10.1063/1.4892924

Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm

H. Sato, E. C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, H. Ohno

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224 Citations (Scopus)

Abstract

We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11nm from 56nm. Thermal stability factor (Δ) of MTJ with the structure starts to decrease at D=30nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing factors of MTJs. Intrinsic critical current (I_C0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to I_C0 shows continuous increase with decrease of D down to 11nm.

Original language	English
Article number	062403
Journal	Applied Physics Letters
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.4892924
Publication status	Published - 2014 Aug 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm",

abstract = "We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11nm from 56nm. Thermal stability factor (Δ) of MTJ with the structure starts to decrease at D=30nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11nm.",

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AU - Sato, H.

AU - Enobio, E. C.I.

AU - Yamanouchi, M.

AU - Ikeda, S.

AU - Fukami, S.

AU - Kanai, S.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2014/8/11

Y1 - 2014/8/11

N2 - We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11nm from 56nm. Thermal stability factor (Δ) of MTJ with the structure starts to decrease at D=30nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11nm.

AB - We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11nm from 56nm. Thermal stability factor (Δ) of MTJ with the structure starts to decrease at D=30nm. D dependence of Δ agrees well with that expected from magnetic properties of blanket film taking into account the change in demagnetizing factors of MTJs. Intrinsic critical current (IC0) reduces with decrease of D in the entire investigated D range. A ratio of Δ to IC0 shows continuous increase with decrease of D down to 11nm.

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Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm

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